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TPCA8018-H(TE12LQM

TPCA8018-H(TE12LQM

TPCA8018-H(TE12LQM

Toshiba Semiconductor and Storage

MOSFET MOSFET N-Ch 30V 30A Rdson 0.0043 Ohm

SOT-23

TPCA8018-H(TE12LQM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.6W Ta 45W Tc
Power Dissipation 45W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2846pF @ 10V
Current - Continuous Drain (Id) @ 25°C 30A Ta
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
RoHS Status RoHS Compliant

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