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TPCF8101(TE85L,F,M

TPCF8101(TE85L,F,M

TPCF8101(TE85L,F,M

Toshiba Semiconductor and Storage

MOSFET P-CH 12V 6A VS-8

SOT-23

TPCF8101(TE85L,F,M Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Supplier Device Package VS-8 (2.9x1.5)
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2002
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 700mW Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 28mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Rise Time 7ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 8V
Input Capacitance 1.6nF
Rds On Max 28 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant

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