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TPCF8A01(TE85L)

TPCF8A01(TE85L)

TPCF8A01(TE85L)

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 3A VS-8

SOT-23

TPCF8A01(TE85L) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series U-MOSIII
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 3A
Power Dissipation-Max 330mW Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 49m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 5V
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 2V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 4.4 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 12V
FET Feature Schottky Diode (Isolated)
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead

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