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TPCP8005-H(TE85L,F

TPCP8005-H(TE85L,F

TPCP8005-H(TE85L,F

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 11A PS-8

SOT-23

TPCP8005-H(TE85L,F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series U-MOSV-H
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation-Max 840mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.68W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12.9m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status RoHS Compliant

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