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TPH3R203NL,L1Q

TPH3R203NL,L1Q

TPH3R203NL,L1Q

Toshiba Semiconductor and Storage

N-Channel Tape & Reel (TR) 3.2m Ω @ 23.5A, 10V ±20V 2100pF @ 15V 21nC @ 10V 8-PowerVDFN

SOT-23

TPH3R203NL,L1Q Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Weight 850.995985mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series U-MOSVIII-H
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code S-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Ta 44W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 23.5A, 10V
Vgs(th) (Max) @ Id 2.3V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 15V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 4.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.7 ns
Turn-Off Delay Time 11.5 ns
Continuous Drain Current (ID) 47A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 60A
Drain-source On Resistance-Max 0.0047Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 94 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.585166 $1.585166
10 $1.495440 $14.9544
100 $1.410792 $141.0792
500 $1.330936 $665.468
1000 $1.255600 $1255.6
TPH3R203NL,L1Q Product Details

TPH3R203NL,L1Q Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 94 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2100pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 47A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 60A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11.5 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 200A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 24 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

TPH3R203NL,L1Q Features


the avalanche energy rating (Eas) is 94 mJ
a continuous drain current (ID) of 47A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11.5 ns
based on its rated peak drain current 200A.


TPH3R203NL,L1Q Applications


There are a lot of Toshiba Semiconductor and Storage
TPH3R203NL,L1Q applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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