TRS12N65D,S1F datasheet pdf and Diodes - Rectifiers - Arrays product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
TRS12N65D,S1F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Weight
38.000013g
Packaging
Tube
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
90μA @ 650V
Voltage - Forward (Vf) (Max) @ If
1.7V @ 6A
Forward Current
6A
Operating Temperature - Junction
175°C Max
Current - Average Rectified (Io)
6A DC
Forward Voltage
1.22V
Max Reverse Voltage (DC)
650V
Average Rectified Current
6A
Peak Reverse Current
90μA
Max Repetitive Reverse Voltage (Vrrm)
650V
Diode Configuration
1 Pair Common Cathode
Max Forward Surge Current (Ifsm)
60A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
30
$5.61600
$168.48
TRS12N65D,S1F Product Details
TRS12N65D,S1F Overview
In operation, this device will be set to 1.22V volts forward.A forward voltage of 6A will enable the device to operate.This device is powered with reverse voltage peak of 90μA V.
TRS12N65D,S1F Features
1.22V forward voltage a peak voltage of 90μA a reverse voltage peak of 90μA
TRS12N65D,S1F Applications
There are a lot of Toshiba Semiconductor and Storage TRS12N65D,S1F applications of rectifier diode array.