TRS20N65D,S1F datasheet pdf and Diodes - Rectifiers - Arrays product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
TRS20N65D,S1F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Weight
38.000013g
Packaging
Tube
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
90μA @ 650V
Voltage - Forward (Vf) (Max) @ If
1.7V @ 10A
Forward Current
10A
Operating Temperature - Junction
175°C Max
Current - Average Rectified (Io)
10A DC
Forward Voltage
1.24V
Max Reverse Voltage (DC)
650V
Average Rectified Current
10A
Peak Reverse Current
90μA
Max Repetitive Reverse Voltage (Vrrm)
650V
Diode Configuration
1 Pair Common Cathode
Max Forward Surge Current (Ifsm)
100A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$9.43000
$9.43
30
$7.72867
$231.8601
TRS20N65D,S1F Product Details
TRS20N65D,S1F Overview
As long as the forward voltage is set to 1.24V, the device will operate.In this case, the forward voltage has to be set at 10A to operate the device.There is a reverse voltage peak of 90μA on devices like this one.
TRS20N65D,S1F Features
1.24V forward voltage a peak voltage of 90μA a reverse voltage peak of 90μA
TRS20N65D,S1F Applications
There are a lot of Toshiba Semiconductor and Storage TRS20N65D,S1F applications of rectifier diode array.