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TTC008(Q)

  • TTC008(Q)
  • TTC008(Q)

TTC008(Q)

TTC008(Q)

Toshiba Semiconductor and Storage

TTC008(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

TTC008(Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1.1W
Number of Elements 1
Power Dissipation 1.1W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 62.5mA, 500mA
Collector Emitter Breakdown Voltage 285V
Collector Base Voltage (VCBO) 600V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.757313 $0.757313
10 $0.714446 $7.14446
100 $0.674006 $67.4006
500 $0.635855 $317.9275
1000 $0.599863 $599.863
TTC008(Q) Product Details

TTC008(Q) Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 1mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 62.5mA, 500mA.The base voltage of the emitter can be kept at 7V to achieve high efficiency.During maximum operation, collector current can be as low as 1.5A volts.

TTC008(Q) Features


the DC current gain for this device is 80 @ 1mA 5V
the vce saturation(Max) is 1V @ 62.5mA, 500mA
the emitter base voltage is kept at 7V

TTC008(Q) Applications


There are a lot of Toshiba Semiconductor and Storage TTC008(Q) applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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