FZT755TA Overview

This device has a DC current gain of 50 @ 500mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.When VCE saturation is 500mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 30MHz in the part.Breakdown input voltage is 150V volts.Maximum collector currents can be below 1A volts.

FZT755TA Features

the DC current gain for this device is 50 @ 500mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 30MHz

FZT755TA Applications

There are a lot of Diodes Incorporated FZT755TA applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver