TP65H035WS

new-10%

Manufacturer part number:TP65H035WS

Manufacturer:Transphorm

Description:GANFET N-CH 650V 46.5A TO247-3

Case Package:SOT-23

Datasheet:TP65H035WS Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Technology	GaNFET (Cascode Gallium Nitride FET)
Power Dissipation-Max	156W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	41m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	4.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 400V
Current - Continuous Drain (Id) @ 25°C	46.5A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	12V
Vgs (Max)	±20V
RoHS Status	RoHS Compliant