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TP65H070LSG

TP65H070LSG

TP65H070LSG

Transphorm

GaNFET (Cascode Gallium Nitride FET) N-Channel 85m Ω @ 16A, 10V ±20V 600pF @ 400V 9.3nC @ 10V 650V 3-PowerDFN

SOT-23

TP65H070LSG Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 3-PowerDFN
Operating Temperature -55°C~150°C TJ
Series TP65H070L
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology GaNFET (Cascode Gallium Nitride FET)
Power Dissipation-Max 96W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 85m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4.8V @ 700μA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 400V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
TP65H070LSG Product Details

TP65H070LSG Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 600pF @ 400V.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

TP65H070LSG Features


a 650V drain to source voltage (Vdss)


TP65H070LSG Applications


There are a lot of Transphorm
TP65H070LSG applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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