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D1017UK.02

D1017UK.02

D1017UK.02

TT Electronics / Semelab

D1017UK.02 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from TT Electronics / Semelab stock available on our website

SOT-23

D1017UK.02 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Material Si
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology DMOS
Maximum Drain Source Voltage (V) 70
Maximum Gate Source Voltage (V) ±20
Maximum VSWR 20(Min)
Maximum Continuous Drain Current (A) 30
Typical Input Capacitance @ Vds (pF) 360(Max)@0V
Typical Reverse Transfer Capacitance @ Vds (pF) 10(Max)@28V
Typical Output Capacitance @ Vds (pF) 100(Max)@28V
Typical Forward Transconductance (S) 3.2(Min)
Maximum Power Dissipation (mW) 220000
Output Power (W) 150
Typical Power Gain (dB) 16(Min)
Maximum Frequency (MHz) 175
Minimum Frequency (MHz) 1
Typical Drain Efficiency (%) 50(Min)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Supplier Package Case DM
Military No
Mounting Screw
Package Height 6.6
Package Length 24.76
Package Width 12.7
PCB changed 4
Part Status Active
Pin Count 4
Configuration Single Dual Source
Channel Type N
RoHS Status RoHS Compliant

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