1N6483HE3/97

new-10%

Manufacturer part number:1N6483HE3/97

Manufacturer:Vishay Semiconductor Diodes Division

Description:DIODE GEN PURP 800V 1A DO213AB

Case Package:SOT-23

Datasheet:1N6483HE3/97 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DO-213AB, MELF (Glass)
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2011
Series	SUPERECTIFIER®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
Additional Feature	FREE WHEELING DIODE, HIGH RELIABILITY
HTS Code	8541.10.00.80
Subcategory	Rectifier Diodes
Terminal Position	END
Terminal Form	WRAP AROUND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	1N6483
Pin Count	2
JESD-30 Code	O-PELF-R2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Speed	Standard Recovery >500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	10μA @ 800V
Voltage - Forward (Vf) (Max) @ If	1.1V @ 1A
Case Connection	ISOLATED
Forward Current	1A
Operating Temperature - Junction	-65°C~175°C
Max Surge Current	30A
Output Current-Max	1A
Max Reverse Voltage (DC)	800V
Average Rectified Current	1A
Peak Reverse Current	10μA
Max Repetitive Reverse Voltage (Vrrm)	800V
Capacitance @ Vr, F	8pF @ 4V 1MHz
Peak Non-Repetitive Surge Current	30A
Reverse Voltage	800V
RoHS Status	ROHS3 Compliant