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MMBZ5257C-G3-18

MMBZ5257C-G3-18

MMBZ5257C-G3-18

Vishay Semiconductor Diodes Division

ZENER DIODE 58Ohm ±2% 33V 100nA @ 25V -55°C~150°C 225mW 3 Terminations TO-236-3, SC-59, SOT-23-3

SOT-23

MMBZ5257C-G3-18 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 8.107964mg
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
JESD-30 Code R-PDSO-G3
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 58Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 25V
Power Dissipation 300mW
Max Reverse Leakage Current 100nA
Impedance-Max 58Ohm
Reference Voltage 33V
Zener Voltage 33V
Voltage Tol-Max 2%
Working Test Current 3.8mA
Voltage Tolerance 5%
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.03859 $0.3859
MMBZ5257C-G3-18 Product Details

MMBZ5257C-G3-18 Overview


The reverse leakage current for this electrical device is 100nA @ 25V.Voltage (Tol) 2% is the maximum possible.Reverse leakage currents can reach 100nA.This device should be operated with a 3.8mA working test voltage.

MMBZ5257C-G3-18 Features


reverse leakage current of 100nA @ 25V
100nA @ 25V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the working test voltage to 3.8mA
minimal dynamic impedance is 3.8mA


MMBZ5257C-G3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
MMBZ5257C-G3-18 applications of zener single diodes.


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