Name: SBLB2030CT-E3/81
Brand: Vishay Semiconductor Diodes Division
SKU: SBLB2030CT-E3/81
Availability: InStock

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SBLB2030CT-E3/81

Manufacturer part number:SBLB2030CT-E3/81

Manufacturer:Vishay Semiconductor Diodes Division

Description:SBLB2030CT-E3/81 datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website

Case Package:SOT-23

Datasheet:SBLB2030CT-E3/81 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	LOW POWER LOSS, FREE WHEELING DIODE
HTS Code	8541.10.00.80
Subcategory	Rectifier Diodes
Terminal Position	SINGLE
Terminal Form	GULL WING
Base Part Number	SBLB2030CT
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	2
Element Configuration	Common Cathode
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Schottky
Current - Reverse Leakage @ Vr	1mA @ 30V
Voltage - Forward (Vf) (Max) @ If	600mV @ 10A
Forward Current	20A
Max Reverse Leakage Current	1mA
Operating Temperature - Junction	-55°C~150°C
Max Surge Current	250A
Application	EFFICIENCY
Max Reverse Voltage (DC)	30V
Average Rectified Current	10A
Number of Phases	1
Peak Reverse Current	1mA
Max Repetitive Reverse Voltage (Vrrm)	30V
Peak Non-Repetitive Surge Current	250A
Diode Configuration	1 Pair Common Cathode
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

SBLB2030CT-E3/81 Product Details

SBLB2030CT-E3/81 Overview

Keeping the surge current under 250A and preventing it from exceeding it should be the rule.A forward voltage of 20A will enable the device to operate.A reverse voltage peak of 1mA is applied to devices like this one.When reverse biased, its maximum reverse leakage current is 1mA, which is the current coming from that semiconductor device.