V20120C-E3/4W datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
SOT-23
V20120C-E3/4W Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
27 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
2
Diode Element Material
SILICON
Packaging
Tube
Published
2011
Series
TMBS®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Additional Feature
FREE WHEELING DIODE, LOW POWER LOSS
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
700μA @ 120V
Voltage - Forward (Vf) (Max) @ If
900mV @ 10A
Forward Current
20A
Max Reverse Leakage Current
150μA
Operating Temperature - Junction
-40°C~150°C
Max Surge Current
110A
Application
EFFICIENCY
Forward Voltage
900mV
Max Reverse Voltage (DC)
120V
Average Rectified Current
10A
Number of Phases
1
Reverse Recovery Time
20 ns
Peak Reverse Current
700μA
Max Repetitive Reverse Voltage (Vrrm)
120V
Peak Non-Repetitive Surge Current
120A
Diode Configuration
1 Pair Common Cathode
Max Forward Surge Current (Ifsm)
175A
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.271000
$1.271
10
$1.199057
$11.99057
100
$1.131185
$113.1185
500
$1.067156
$533.578
1000
$1.006751
$1006.751
V20120C-E3/4W Product Details
V20120C-E3/4W Overview
When the forward voltage is set to 900mV, this device will operate.Array should be a rule to monArrayor the surge current and not allow Array to exceed 110A.In operation, this device will be set to 20A volts forward.The reverse voltage peak of this device is 700μA.As a reverse biased semiconductor device, its maximal reverse leakage current is 150μA.
V20120C-E3/4W Features
900mV forward voltage a peak voltage of 700μA a reverse voltage peak of 700μA
V20120C-E3/4W Applications
There are a lot of Vishay Semiconductor Diodes Division V20120C-E3/4W applications of rectifier diode array.