V60200PGW-M3/4W datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
SOT-23
V60200PGW-M3/4W Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tube
Published
2017
Series
TMBS®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Additional Feature
FREE WHEELING DIODE, LOW POWER LOSS
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Position
SINGLE
Pin Count
3
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
210μA @ 200V
Voltage - Forward (Vf) (Max) @ If
1.48V @ 30A
Forward Current
60A
Operating Temperature - Junction
-40°C~150°C
Application
EFFICIENCY
Forward Voltage
1.48V
Max Reverse Voltage (DC)
200V
Average Rectified Current
30A
Number of Phases
1
Peak Reverse Current
210μA
Max Repetitive Reverse Voltage (Vrrm)
200V
Peak Non-Repetitive Surge Current
300A
Diode Configuration
1 Pair Common Cathode
Max Forward Surge Current (Ifsm)
300A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
V60200PGW-M3/4W Product Details
V60200PGW-M3/4W Overview
This device will operate when the forward voltage is set to 1.48V.The device operates when the forward voltage is set to 60A.Typical devices like this one are powered by reverse voltage peaks of 210μA.
V60200PGW-M3/4W Features
1.48V forward voltage a peak voltage of 210μA a reverse voltage peak of 210μA
V60200PGW-M3/4W Applications
There are a lot of Vishay Semiconductor Diodes Division V60200PGW-M3/4W applications of rectifier diode array.