HGT1N40N60A4D Description

The HGT1N40N60A4D is a MOS gated high voltage switching device that combines the advantages of MOSFETs with bipolar transistors. These devices have a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25oC and 150oC, the significantly smaller on-state voltage loss fluctuates relatively modestly. This IGBT is suited for a variety of high-voltage switching applications that require minimal conduction losses and operate at high frequencies. This gadget was created with high-frequency switch-mode power supplies in mind.

HGT1N40N60A4D Features

• Low Conduction Loss

• 100kHz Operation At 390V, 22A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC

HGT1N40N60A4D Application

• High voltage switching applications