VS-8EWF02STR-M3

new-10%

Manufacturer part number:VS-8EWF02STR-M3

Manufacturer:Vishay Semiconductor Diodes Division

Description:DIODE GEN PURP 200V 8A D-PAK

Case Package:SOT-23

Datasheet:VS-8EWF02STR-M3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2015
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Additional Feature	FREEWHEELING DIODE, LOW LEAKAGE CURRENT
HTS Code	8541.10.00.80
Subcategory	Rectifier Diodes
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	10
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	100μA @ 200V
Voltage - Forward (Vf) (Max) @ If	1.2V @ 8A
Case Connection	CATHODE
Forward Current	8A
Operating Temperature - Junction	-40°C~150°C
Output Current-Max	8A
Application	FAST SOFT RECOVERY HIGH POWER
Max Reverse Voltage (DC)	200V
Average Rectified Current	8A
Number of Phases	1
Reverse Recovery Time	55 ns
Peak Reverse Current	100μA
Max Repetitive Reverse Voltage (Vrrm)	200V
JEDEC-95 Code	TO-252AA
Max Forward Surge Current (Ifsm)	200A
Height	2.39mm
Length	6.73mm
Width	6.22mm
RoHS Status	ROHS3 Compliant