VS-GA200SA60SP

new-10%

Manufacturer part number:VS-GA200SA60SP

Manufacturer:Vishay Semiconductor Diodes Division

Description:VISHAY VS-GA200SA60SP IGBT Single Transistor, 200 A, 1.1 V, 630 W, 600 V, ISOTOP, 4

Case Package:SOT-23

Datasheet:VS-GA200SA60SP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2000
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Additional Feature	UL APPROVED
Max Power Dissipation	630W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Number of Elements	1
Configuration	Single
Power Dissipation	630W
Case Connection	ISOLATED
Power - Max	781W
Transistor Application	POWER CONTROL
Rise Time	60ns
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	342A
Current - Collector Cutoff (Max)	1mA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.1V
Input Capacitance	16.25nF
Turn On Time	132 ns
Vce(on) (Max) @ Vge, Ic	1.3V @ 15V, 100A
Turn Off Time-Nom (toff)	2160 ns
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	16.25nF @ 30V
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant