APTGL60DH120T3G

new-10%

Manufacturer part number:APTGL60DH120T3G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 1.2KV 80A 16-Pin Case SP-3

Case Package:SOT-23

Datasheet:APTGL60DH120T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	16
Operating Temperature	-40°C~175°C TJ
Published	2012
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	280W
Number of Elements	1
Configuration	Asymmetrical Bridge
Element Configuration	Dual
Power - Max	280W
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	80A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	2.77nF
Vce(on) (Max) @ Vge, Ic	2.25V @ 15V, 50A
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	2.77nF @ 25V
VCEsat-Max	2.25 V
RoHS Status	RoHS Compliant