VS-GB50TP120N

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Manufacturer part number:VS-GB50TP120N

Manufacturer:Vishay Semiconductor Diodes Division

Description:IGBT 1200V 100A 446W INT-A-PAK

Case Package:SOT-23

Datasheet:VS-GB50TP120N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	INT-A-PAK (3 + 4)
Supplier Device Package	INT-A-PAK
Operating Temperature	150°C TJ
Published	2015
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	446W
Configuration	Half Bridge
Power - Max	446W
Input	Standard
Collector Emitter Voltage (VCEO)	2.15V
Max Collector Current	100A
Current - Collector Cutoff (Max)	5mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	100A
Input Capacitance	4.29nF
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 50A
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	4.29nF @ 25V
RoHS Status	ROHS3 Compliant