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VS-GB75SA120UP

VS-GB75SA120UP

VS-GB75SA120UP

Vishay Semiconductor Diodes Division

VISHAY VS-GB75SA120UP IGBT Array & Module Transistor, NPN, 131 A, 3.3 V, 658 W, 1.2 kV, SOT-227

SOT-23

VS-GB75SA120UP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Operating Temperature -40°C~150°C TJ
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 658W
Polarity NPN
Configuration Single
Power - Max 658W
Input Standard
Collector Emitter Voltage (VCEO) 3.8V
Max Collector Current 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.3V
Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 75A
IGBT Type NPT
NTC Thermistor No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

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