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VS-GB75YF120UT

VS-GB75YF120UT

VS-GB75YF120UT

Vishay Semiconductor Diodes Division

VISHAY VS-GB75YF120UT IGBT Array & Module Transistor, NPN, 100 A, 3.8 V, 480 W, 1.2 kV, Module

SOT-23

VS-GB75YF120UT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Chassis Mount, PCB, Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 33
Operating Temperature 150°C TJ
Published 2011
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 480W
Polarity NPN
Power - Max 480W
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 100A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.8V
Vce(on) (Max) @ Vge, Ic 4.5V @ 15V, 100A
NTC Thermistor Yes
Height 13.2mm
Length 107.8mm
Width 45.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
12 $376.23083 $4514.76996

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