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TCDT1101

TCDT1101

TCDT1101

Vishay Semiconductor Opto Division

TCDT1101 datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from Vishay Semiconductor Opto Division stock available on our website

SOT-23

TCDT1101 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case 6-DIP (0.300, 7.62mm)
Number of Pins 6
Supplier Device Package 6-DIP
Operating Temperature -55°C~110°C
Packaging Tube
Published 2005
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 100°C
Min Operating Temperature -55°C
Max Power Dissipation 250mW
Voltage - Isolation 5000Vrms
Output Voltage 32V
Output Type Transistor
Number of Elements 1
Row Spacing 9 mm
Number of Channels 1
Power Dissipation 250mW
Voltage - Forward (Vf) (Typ) 1.25V
Input Type DC
Forward Current 60mA
Max Output Voltage 32V
Output Current per Channel 50mA
Rise Time 7μs
Forward Voltage 1.6V
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 50mA
Collector Emitter Breakdown Voltage 32V
Rise / Fall Time (Typ) 7μs 6.7μs
Current - Output / Channel 50mA
Reverse Breakdown Voltage 5V
Voltage - Output (Max) 32V
Max Input Current 60mA
Collector Emitter Saturation Voltage 300mV
Current - DC Forward (If) (Max) 60mA
Current Transfer Ratio (Min) 40% @ 10mA
Input Current 50mA
Current Transfer Ratio (Max) 80% @ 10mA
Turn On / Turn Off Time (Typ) 11μs, 7μs
Vce Saturation (Max) 300mV
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.20100 $0.402

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