2N6660-E3

new-10%

Manufacturer part number:2N6660-E3

Manufacturer:Vishay Siliconix

Description:VISHAY 2N6660-E3 MOSFET Transistor, N Channel, 990 mA, 75 V, 1.3 ohm, 10 V, 1.7 V

Case Package:SOT-23

Datasheet:2N6660-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	725mW Ta 6.25W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	725mW
FET Type	N-Channel
Transistor Application	AMPLIFIER
Rds On (Max) @ Id, Vgs	3 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	990mA Tc
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	1.1A
Threshold Voltage	1.7V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.99A
Drain-source On Resistance-Max	3Ohm
Drain to Source Breakdown Voltage	60V
Nominal Vgs	1.7 V
Height	6.6mm
Length	9.4mm
Width	8.15mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant