IRC730PBF

new-10%

Manufacturer part number:IRC730PBF

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 400V 5.5A 5-Pin(5+Tab) TO-220

Case Package:SOT-23

Datasheet:IRC730PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-5
Weight	3.000003g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	40
Pin Count	5
JESD-30 Code	R-PSFM-T5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Number of Channels	1
Power Dissipation-Max	74W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1 Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.5A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	5.5A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	1Ohm
Drain to Source Breakdown Voltage	400V
Pulsed Drain Current-Max (IDM)	22A
FET Feature	Current Sensing
Height	9.02mm
Length	10.67mm
Width	4.83mm
RoHS Status	ROHS3 Compliant