IRF510L

new-10%

Manufacturer part number:IRF510L

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 5.6A TO-262

Case Package:SOT-23

Datasheet:IRF510L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package	TO-262-3
Weight	6.000006g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.7W
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Element Configuration	Single
Turn On Delay Time	6.9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.6A Tc
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	100V
Fall Time (Typ)	9.4 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	5.6A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	180pF
Drain to Source Resistance	540mOhm
Rds On Max	540 mΩ
Height	9.01mm
Length	10.41mm
Width	4.7mm
RoHS Status	Non-RoHS Compliant