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IRF620STRL

IRF620STRL

IRF620STRL

Vishay Siliconix

MOSFET N-CH 200V 5.2A D2PAK

SOT-23

IRF620STRL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 3W Ta 50W Tc
Element Configuration Single
Turn On Delay Time 7.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.2A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 5.2A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 260pF
Drain to Source Resistance 800mOhm
Rds On Max 800 mΩ
Height 4.83mm
Length 10.67mm
Width 9.65mm
RoHS Status Non-RoHS Compliant

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