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IRF820AL

IRF820AL

IRF820AL

Vishay Siliconix

Trans MOSFET N-CH 500V 2.5A 3-Pin(3+Tab) TO-262

SOT-23

IRF820AL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK
Weight 2.387001g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Turn On Delay Time 8.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Input Capacitance 340pF
Drain to Source Resistance 3Ohm
Rds On Max 3 Ω
Height 4.83mm
Length 10.67mm
Width 9.65mm
RoHS Status Non-RoHS Compliant

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