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IPU80R2K8CEBKMA1

IPU80R2K8CEBKMA1

IPU80R2K8CEBKMA1

Infineon Technologies

MOSFET N-CH 800V 1.9A TO251-3

SOT-23

IPU80R2K8CEBKMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Supplier Device Package PG-TO251-3
Weight 343.085929mg
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 42W Tc
Element Configuration Single
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 120μA
Halogen Free Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 100V
Current - Continuous Drain (Id) @ 25°C 1.9A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 1.9A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 800V
Input Capacitance 290pF
Drain to Source Resistance 2.8Ohm
Rds On Max 2.8 Ω
Height 6.22mm
Length 6.73mm
Width 2.41mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.474158 $0.474158
10 $0.447319 $4.47319
100 $0.421999 $42.1999
500 $0.398113 $199.0565
1000 $0.375578 $375.578

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