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IRF830ASTRL

IRF830ASTRL

IRF830ASTRL

Vishay Siliconix

MOSFET N-CH 500V 5A D2PAK

SOT-23

IRF830ASTRL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 3.1W Ta 74W Tc
Element Configuration Single
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 21ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Input Capacitance 620pF
Drain to Source Resistance 1.4Ohm
Rds On Max 1.4 Ω
Height 4.83mm
Length 10.67mm
Width 9.65mm
RoHS Status Non-RoHS Compliant

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