Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRF840ALPBF

IRF840ALPBF

IRF840ALPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 850mOhm @ 4.8A, 10V ±30V 1018pF @ 25V 38nC @ 10V 500V TO-262-3 Long Leads, I2Pak, TO-262AA

SOT-23

IRF840ALPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package I2PAK
Weight 2.387001g
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2011
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 125W Tc
Element ConfigurationSingle
Power Dissipation3.1W
Turn On Delay Time11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1018pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time23ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 30V
Input Capacitance1.018nF
Drain to Source Resistance 850mOhm
Rds On Max 850 mΩ
Height 9.65mm
Length 10.41mm
Width 4.7mm
REACH SVHC Unknown
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:2318 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.134878$1.134878
10$1.070640$10.7064
100$1.010038$101.0038
500$0.952866$476.433
1000$0.898930$898.93

IRF840ALPBF Product Details

IRF840ALPBF Overview


A device's maximum input capacitance is 1018pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 26 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 850mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF840ALPBF Features


a continuous drain current (ID) of 8A
the turn-off delay time is 26 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)


IRF840ALPBF Applications


There are a lot of Vishay Siliconix
IRF840ALPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

Get Subscriber

Enter Your Email Address, Get the Latest News