IRFBC30LPBF

new-10%

Manufacturer part number:IRFBC30LPBF

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 600V 3.6A TO-262

Case Package:SOT-23

Datasheet:IRFBC30LPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Supplier Device Package	TO-262-3
Weight	2.387001g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	3.1W Ta 74W Tc
Element Configuration	Single
Turn On Delay Time	11 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.6A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	3.6A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Input Capacitance	660pF
Drain to Source Resistance	2.2Ohm
Rds On Max	2.2 Ω
Height	9.65mm
Length	10.67mm
Width	4.83mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant