IRFBE30

new-10%

Manufacturer part number:IRFBE30

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB

Case Package:SOT-23

Datasheet:IRFBE30 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Weight	6.000006g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2014
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Current Rating	4.1A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Power Dissipation	125W
Turn On Delay Time	12 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.1A Tc
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Rise Time	33ns
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	82 ns
Continuous Drain Current (ID)	4.1A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	800V
Input Capacitance	1.3nF
Drain to Source Resistance	3Ohm
Rds On Max	3 Ω
Height	9.01mm
Length	10.41mm
Width	4.7mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead