IRFBF20S

new-10%

Manufacturer part number:IRFBF20S

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 900V 1.7A D2PAK

Case Package:SOT-23

Datasheet:IRFBF20S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	D2PAK
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	900V
Technology	MOSFET (Metal Oxide)
Current Rating	1.7A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.1W Ta 54W Tc
Element Configuration	Single
Power Dissipation	3.1W
Turn On Delay Time	8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.7A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	21ns
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	56 ns
Continuous Drain Current (ID)	1.7A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	900V
Input Capacitance	490pF
Drain to Source Resistance	8Ohm
Rds On Max	8 Ω
Height	4.83mm
Length	10.67mm
Width	9.65mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead