IRFBF30S

new-10%

Manufacturer part number:IRFBF30S

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 900V 3.6A D2PAK

Case Package:SOT-23

Datasheet:IRFBF30S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	D2PAK
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.7Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.6A Tc
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	3.6A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.2nF
Drain to Source Resistance	3.7Ohm
Rds On Max	3.7 Ω
Height	4.83mm
Length	10.41mm
Width	9.65mm
RoHS Status	Non-RoHS Compliant