IRFSL11N50A

new-10%

Manufacturer part number:IRFSL11N50A

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 500V 11A TO-262

Case Package:SOT-23

Datasheet:IRFSL11N50A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package	TO-262-3
Weight	2.387001g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	11A
Number of Channels	1
Power Dissipation-Max	190W Tc
Element Configuration	Single
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	550mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1426pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	51nC @ 10V
Rise Time	34ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Input Capacitance	1.426nF
Drain to Source Resistance	550mOhm
Rds On Max	550 mΩ
Height	9.65mm
Length	10.67mm
Width	4.83mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead