IRFD120

new-10%

Manufacturer part number:IRFD120

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 1.3A 4-DIP

Case Package:SOT-23

Datasheet:IRFD120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2015
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Through Hole
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Current Rating	1.3A
Lead Pitch	2.54mm
Number of Elements	1
Row Spacing	7.62 mm
Power Dissipation-Max	1.3W Ta
Power Dissipation	1.3W
Turn On Delay Time	6.8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	270mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	360pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.3A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Rise Time	27ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	1.3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	360pF
Drain to Source Resistance	270mOhm
Rds On Max	270 mΩ
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant