IRFD214

new-10%

Manufacturer part number:IRFD214

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 250V 450MA 4-DIP

Case Package:SOT-23

Datasheet:IRFD214 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Ta
Power Dissipation	1W
Turn On Delay Time	7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2Ohm @ 270mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 25V
Current - Continuous Drain (Id) @ 25°C	450mA Ta
Gate Charge (Qg) (Max) @ Vgs	8.2nC @ 10V
Rise Time	7.6ns
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	7.6 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	450mA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	250V
Input Capacitance	140pF
Drain to Source Resistance	2Ohm
Rds On Max	2 Ω
Height	3.37mm
Length	5mm
Width	6.29mm
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant