SUD50N10-18P-E3

new-10%

Manufacturer part number:SUD50N10-18P-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 8.2A TO252

Case Package:SOT-23

Datasheet:SUD50N10-18P-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	2
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	18.5MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
Number of Elements	1
Power Dissipation-Max	3W Ta 136.4W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	136.4W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 50V
Current - Continuous Drain (Id) @ 25°C	8.2A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free