IRFD224

new-10%

Manufacturer part number:IRFD224

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 250V 630MA 4-DIP

Case Package:SOT-23

Datasheet:IRFD224 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1W Ta
Turn On Delay Time	7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.1Ohm @ 380mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	260pF @ 25V
Current - Continuous Drain (Id) @ 25°C	630mA Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	630mA
Gate to Source Voltage (Vgs)	20V
Input Capacitance	260pF
Rds On Max	1.1 Ω
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant