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IRFD9220PBF

IRFD9220PBF

IRFD9220PBF

Vishay Siliconix

MOSFET (Metal Oxide) P-Channel Tube 1.5Ohm @ 340mA, 10V ±20V 340pF @ 25V 15nC @ 10V 200V 4-DIP (0.300, 7.62mm)

SOT-23

IRFD9220PBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.5Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -200V
Technology MOSFET (Metal Oxide)
Current Rating -560mA
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Power Dissipation 1W
Turn On Delay Time 8.8 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1.5Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 560mA Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 7.3 ns
Continuous Drain Current (ID) -560mA
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 340pF
Drain to Source Resistance 1.5Ohm
Rds On Max 1.5 Ω
Height 3.37mm
Length 6.29mm
Width 5mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.334142 $3.334142
10 $3.145417 $31.45417
100 $2.967374 $296.7374
500 $2.799409 $1399.7045
1000 $2.640952 $2640.952
IRFD9220PBF Product Details

IRFD9220PBF Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 340pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -560mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 7.3 ns.This device has a drain-to-source resistance of 1.5Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is -4V, which means that it will not activate any of its functions when its threshold voltage reaches -4V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFD9220PBF Features


a continuous drain current (ID) of -560mA
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 7.3 ns
single MOSFETs transistor is 1.5Ohm
a threshold voltage of -4V
a 200V drain to source voltage (Vdss)


IRFD9220PBF Applications


There are a lot of Vishay Siliconix
IRFD9220PBF applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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