NTMS7N03R2

new-10%

Manufacturer part number:NTMS7N03R2

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 4.8A 8-SOIC

Case Package:SOT-23

Datasheet:NTMS7N03R2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	OBSOLETE (Last Updated: 1 day ago)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	7A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	800mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	23m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1190pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.8A Ta
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Rise Time	71ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	4.8A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.023Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	14A
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead