IRFI620G

new-10%

Manufacturer part number:IRFI620G

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 4.1A TO220FP

Case Package:SOT-23

Datasheet:IRFI620G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Number of Pins	3
Supplier Device Package	TO-220-3
Weight	6.000006g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Turn On Delay Time	7.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	800mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	260pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.1A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	22ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	4.1A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	260pF
Drain to Source Resistance	800mOhm
Rds On Max	800 mΩ
Height	9.8mm
Length	10.63mm
Width	4.83mm
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant