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IRFI9634GPBF

IRFI9634GPBF

IRFI9634GPBF

Vishay Siliconix

P-Channel Tube 1Ohm @ 2.5A, 10V ±20V 680pF @ 25V 38nC @ 10V 250V TO-220-3 Full Pack, Isolated Tab

SOT-23

IRFI9634GPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Number of Pins 3
Supplier Device Package TO-220-3
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 35W Tc
Element Configuration Single
Power Dissipation 35W
Turn On Delay Time 12 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.1A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 4.1A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -250V
Input Capacitance 680pF
Drain to Source Resistance 1Ohm
Rds On Max 1 Ω
Nominal Vgs -4 V
Height 9.8mm
Length 10.63mm
Width 4.83mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.345000 $1.345
10 $1.268868 $12.68868
100 $1.197045 $119.7045
500 $1.129288 $564.644
1000 $1.065366 $1065.366
IRFI9634GPBF Product Details

IRFI9634GPBF Overview


A device's maximal input capacitance is 680pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 34 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -4V threshold voltage.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRFI9634GPBF Features


a continuous drain current (ID) of 4.1A
a drain-to-source breakdown voltage of -250V voltage
the turn-off delay time is 34 ns
single MOSFETs transistor is 1Ohm
a threshold voltage of -4V
a 250V drain to source voltage (Vdss)


IRFI9634GPBF Applications


There are a lot of Vishay Siliconix
IRFI9634GPBF applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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