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SCT3040KRC14

SCT3040KRC14

SCT3040KRC14

ROHM Semiconductor

SiCFET (Silicon Carbide) N-Channel Tube 52m Ω @ 20A, 18V +22V, -4V 1337pF @ 800V 107nC @ 18V 1200V TO-247-4

SOT-23

SCT3040KRC14 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Through Hole
Package / Case TO-247-4
Surface Mount NO
Operating Temperature 175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology SiCFET (Silicon Carbide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 262W
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 20A, 18V
Vgs(th) (Max) @ Id 5.6V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 1337pF @ 800V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 107nC @ 18V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs (Max) +22V, -4V
Drain Current-Max (Abs) (ID) 55A
Drain-source On Resistance-Max 0.052Ohm
Pulsed Drain Current-Max (IDM) 137A
DS Breakdown Voltage-Min 1200V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $56.59000 $56.59
500 $56.0241 $28012.05
1000 $55.4582 $55458.2
1500 $54.8923 $82338.45
2000 $54.3264 $108652.8
2500 $53.7605 $134401.25
SCT3040KRC14 Product Details

SCT3040KRC14 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1337pF @ 800V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 55A.Peak drain current is 137A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 1200V.For this transistor to work, a voltage 1200V is required between drain and source (Vdss).Using drive voltage (18V), this device contributes to a reduction in overall power consumption.

SCT3040KRC14 Features


based on its rated peak drain current 137A.
a 1200V drain to source voltage (Vdss)


SCT3040KRC14 Applications


There are a lot of ROHM Semiconductor
SCT3040KRC14 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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