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IRFIB5N65A

IRFIB5N65A

IRFIB5N65A

Vishay Siliconix

MOSFET N-CH 650V 5.1A TO220FP

SOT-23

IRFIB5N65A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Number of Pins 3
Supplier Device Package TO-220-3
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Current Rating 5.1A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Power Dissipation 60W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 930mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1417pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.1A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 5.1A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 1.417nF
Drain to Source Resistance 930mOhm
Rds On Max 930 mΩ
Height 9.8mm
Length 10.63mm
Width 4.83mm
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.295612 $0.295612
10 $0.278880 $2.7888
100 $0.263094 $26.3094
500 $0.248202 $124.101
1000 $0.234153 $234.153

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