IRFIB8N50KPBF

new-10%

Manufacturer part number:IRFIB8N50KPBF

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 500V 6.7A TO220FP

Case Package:SOT-23

Datasheet:IRFIB8N50KPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	45W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	350m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2160pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6.7A Tc
Gate Charge (Qg) (Max) @ Vgs	89nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	8.4 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	6.7A
Threshold Voltage	5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	27A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	290 mJ
Height	9.8mm
Length	10.63mm
Width	4.83mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant