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IRFR430APBF

IRFR430APBF

IRFR430APBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 1.7Ohm @ 3A, 10V ±30V 490pF @ 25V 24nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

IRFR430APBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Power Dissipation 110W
Turn On Delay Time 8.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Input Capacitance 490pF
Drain to Source Resistance 1.7Ohm
Rds On Max 1.7 Ω
Height 2.39mm
Length 6.73mm
Width 6.22mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.227036 $1.227036
10 $1.157581 $11.57581
100 $1.092058 $109.2058
500 $1.030243 $515.1215
1000 $0.971928 $971.928
IRFR430APBF Product Details

IRFR430APBF Overview


A device's maximal input capacitance is 490pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 17 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.7Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4.5V threshold voltage.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRFR430APBF Features


a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 1.7Ohm
a threshold voltage of 4.5V
a 500V drain to source voltage (Vdss)


IRFR430APBF Applications


There are a lot of Vishay Siliconix
IRFR430APBF applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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